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Analytical, numerical-, and measurement-based methods for extracting the electrical parameters of through silicon vias (TSVs)

: Ndip, I.; Zoschke, K.; Löbbicke, K.; Wolf, M.J.; Guttowski, S.; Reichl, H.; Lang, K.-D.; Henke, H.


IEEE transactions on components, packaging and manufacturing technology 4 (2014), Nr.3, S.504-515
ISSN: 2156-3950
Bundesministerium für Bildung und Forschung BMBF
Fraunhofer IZM ()

In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.