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Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species

Relaxation von Gitterleerstellentiefenprofilen in Siliciumscheiben: Eine niedrige effektive Diffusion von Gitterleerstellenspezies
: Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter

Volltext urn:nbn:de:0011-n-2857001 (816 KByte PDF)
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Copyright AIP
Erstellt am: 7.2.2015

Applied Physics Letters 104 (2014), Nr.3, Art. 032106, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
silicon; vacancies

Vacancy depth profiles in silicon wafersinstalled by Rapid Thermal Annealing and monitored by Pt diffusionshow, upon subsequent annealing at 975 or 950 °C, a peculiar evolution: the concentration profile goes down without any trace of vacancy out-diffusion. The estimated apparent diffusivity is less than 1E7 cm2/s at 975 °C. The monitored vacancy species is tentatively identified as a "slow vacancy" that was recently concluded to exist along with other (highly mobile) vacancy species.