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Tunneling effects and intersubband absorption in AlN/GaN superlattices

Tunneleffekte und Intersubband-Absorption in AlN/GaN-Übergittern
: Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, J.; Eastman, L.F.; Kirste, L.


Applied Physics Letters 86 (2005), Nr.3, Art. 032110, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
AlN/GaN; tunneling effect; Tunneleffekt; intersubband absorption

We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures. For barrier thickness larger than about 25 A.U., the optical intersubband absorption peaks at a considerably smaller energy than the photovoltage spectrum. A simple model taking into account the oscillator strength of the involved transitions and the corresponding tunneling probabilities agrees with the experimental findings. According to this model, the observed photovoltage is the macroscopic manifestation that the two-dimensional electron gas at the top of the superlattice changes its carrier density by a vertical transport of electrons.