Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Recrystallized silicon thin-film solar cells on zircon ceramics

: Schillinger, K.; Janz, S.; Reber, S.

Preprint urn:nbn:de:0011-n-2838557 (470 KByte PDF)
MD5 Fingerprint: ed6fd8a80c87059808342f7abf808fd6
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 25.4.2014

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3299-3
Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; kristalline Silicium-Dünnschichtsolarzelle; recrystallization; crystalline silicon thin-film solar cells; low-cost ceramics

This work describes the processing of recrystallized silicon thin-film solar cells and its typical defects. Zircon (ZrSiO4) ceramic substrates of technical grade with potential production costs of <; 20 €/m2 were used. Those substrates were encapsulated in crystalline silicon carbide, deposited by atmospheric pressure chemical vapor deposition (APCVD). The active silicon layers were also formed using APCVD. Zone-melting recrystallization (ZMR) was used to enlarge Si grains. Si films crystallized on SiC show characteristic 3 twin grain boundaries parallel to the growth direction. The Si crystals achieve widths up to several mm and lengths of several cm. Solar cells made from such material achieved open circuit voltages up to 566 mV on zircon and up to 600 mV on equally processed mc-Si.