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Excitons and exciton-phonon coupling in the optical response of GaN

 
: Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.

:

André, P. (Guest Ed.); Reece, P. (Guest Ed.); Tomm, J.W. (Guest Ed.); Ribierre, J.-C. (Guest Ed.); Moreels, I. (Guest Ed.); Christen, J. (Guest Ed.); Gil, B. (Guest Ed.); Méndez, B. (Guest Ed.); Lorenz, K. (Guest Ed.); Fraboni, B. (Guest Ed.); Ambacher, O. (Guest Ed.) ; European Materials Research Society -EMRS-:
European Materials Research Society Spring Meeting, E-MRS 2013 : Strasbourg, France, 27–31 May 2013, Symposium J: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications IV; Symposium L: Group III Nitrides; Symposium P: Functional Nanowires: Synthesis, Characterization and Applications
Berlin: Wiley-VCH, 2014 (Physica status solidi. C, Current topics in solid state physics 11.2014, Nr.2)
S.297-301
European Materials Research Society (Spring Meeting) <2013, Strasbourg>
Symposium J "Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications" <4, 2013, Strasbourg>
Symposium L "Group III Nitrides" <2013, Strasbourg>
Symposium P "Functional Nanowires - Synthesis, Characterization and Applications" <2013, Strasbourg>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IAF ()
GaN; optical response; excitons; exciton-phonon coupling

Abstract
We carried out reflectance and spectroscopic ellipsometry measurements of high-purity c-plane epitaxial films of wurtzite GaN in a temperature range 5-840 K. Analysis of the data reveals three main contributions to the dielectric function related to optical transitions involving discrete exciton states, excitonic continuum and excitonphonon complexes, respectively. The observed contributing mechanisms show different temperature dependence. This behavior is related to specific interactions between optical excitations and thermal LO phonons.

: http://publica.fraunhofer.de/dokumente/N-283681.html