
Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Epitaktisches Wachstum und Bandelementfertigung von GaN basierten elektronischen und optoelektronischen Strukturen
Abstract
At the Fraunhofer IAF both single and multiwafer low-pressure MOVPE reactors are used for the growth of a) GaN/AlGaN layer sequences for the fabrication of high electron mobility transistors (HEMTs) and b) complex GaInN/GaN/AlGaN layer structures for violet and UV LEDs as well as violet emitting diode lasers In the following both growth related issues as well as results on devices fabricated from these epitaxial layer sequences will be discussed in section 2 for electronic devices and in section 3 for light emitting diodes and diode lasers.