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Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

: Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas


Journal of micro/nanolithography, MEMS and MOEMS 12 (2013), Nr.2, Art. 021005, 12 S.
ISSN: 1537-1646
ISSN: 1932-5150
ISSN: 1932-5134
Fraunhofer IISB ()

This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.