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Title
Gaschemisches Verfahren zum in-situ-Dekorieren von Kristalldefekten
Date Issued
2004
Author(s)
Kreuzer, S.
Bensch, F.
Vogg, G.
Patent No
2003-10316214
Abstract
Bei einem Verfahren zum Dekorieren eines Kristalldefekts an einer Kristalloberflaeche wird ein Aetzgas ueber die Kristalloberflaeche geleitet, um die Kristalloberflaeche durch Aetzen abzutragen, wobei das Dekorieren des Kristalldefekts dadurch bewirkt wird, dass die Aetzrate des Aetzgases an dem Kristalldefekt hoeher oder niedriger ist als an einem defektfreien Bereich der Kristalloberflaeche.
DE 10316214 A UPAB: 20041206 NOVELTY - Etching gas is passed over (106) the crystal surface (22) to etch it. This figuratively decorates the crystal defect (130), since the etching rate at the defect will be greater or less than that of a defect-free region of the crystal surface. USE - To detect defects at a crystal surface. ADVANTAGE - By selection of composition, pressure, flow rate and temperatures, etching may be protracted over long intervals, in the interests of precise control over the rate and ultimate depth of etching. This may be adjusted accurately e.g. in the range from nm to a few microns. Resolution in depth, is improved by at least one order of magnitude over more conventional methods.
Language
de
Patenprio
DE 2003-10316214 A: 20030409