Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Reliable wafer-level-bonding method for MEMS packaging using LTCC interposers

: Ihle, Martin; Ziesche, Steffen; Roscher, Frank; Capraro, Beate; Partsch, Uwe

Postprint urn:nbn:de:0011-n-2820377 (889 KByte PDF)
MD5 Fingerprint: eb8edfe6f9ac2736a7643aa2ad81bfcd
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 2.6.2017

Institute of Electrical and Electronics Engineers -IEEE-:
European Microelectronics and Packaging Conference, EMPC 2013 : 9-12 September 2013, Grenoble, France
Piscataway, NJ: IEEE, 2013
ISBN: 978-2-95-274671-7
4 S.
European Microelectronics and Packaging Conference (EMPC) <2013, Grenoble>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IKTS ()
Fraunhofer ENAS ()
LTCC; MEMS; wafer level packaging; anodic bonding

The anodic bonding of low temperature co-fired ceramics (LTCC) for the wafer-level-packaging of MEMS represents a cost efficient and highly reliable packaging method. To enable for a reliable bonding between the LTCC and the Si wafer the ceramic should have a surface roughness below 50-100 nm. With the aim of avoiding the polishing step for realizing a low ceramic surface roughness a newly developed manufacturing process was deployed, which is based on the optimization of the necessary lamination and sintering steps. The positional accuracy of the electrical feedthroughs within the LTCC ceramic should also become considerably optimized compared to the standard manufacturing process. First promising results will be presented, illustrating the anodic bonding experiments of the wafer level processed Si and ceramic LTCC wafer. Additional a MEMS concept will be introduced to demonstrate the high reliability of ceramic-Si bonding and packaging at operation temperature of up to 300 degrees C.