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Infrared photodetector development at Fraunhofer IAF

 
: Rutz, F.; Kleinow, P.; Walther, M.; Aidam, R.; Bronner, W.; Kirste, L.; Niemasz, J.; Rehm, R.; Schmitz, J.; Stadelmann, T.; Wauro, M.; Wörl, A.; Sieck, A.; Ziegler, J.

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Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Quantum Sensing and Nanophotonic Devices XI : San Francisco, California, United States, 2 - 6 February 2014
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 8993)
ISBN: 978-0-8194-9906-6
Paper 89930W
Conference "Quantum Sensing and Nanophotonic Devices" <11, 2014, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
SWIR; InGaAs; photodiode; APD; InAs/GaSb superlattice; dual-color; MWIR; LWIR

Abstract
Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since pioneering the InAs/GaSb type-II superlattice detector development, extensive capabilities of epitaxy, process technology, and device characterization of single element detectors and camera arrays for the mid- and longwave infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR and MWIR/LWIR cameras based on type-II superlattices or HgCdTe are key topics at Fraunhofer IAF. Recently, we started the development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications. In this contribution, we report on materials and technology development for SWIR p-i-n and avalanche photodiodes (APDs), covering detector design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane arrays as well as single element detectors.

: http://publica.fraunhofer.de/dokumente/N-281937.html