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Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

 
: Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Wagner, S.; Aidam, R.; Rosenzweig, J.; Ambacher, O.; Kallfass, I.; Lewark, U.J.; Sommer, R.; Wahlen, A.; Stanko, S.; Ender, J.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013 : 21-23 October 2013, Tel Aviv, Israel
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-5756-2
4 S.
International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS) <2013, Tel Aviv>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); submillimeter-wave monolithic integrated circuit (S-MMIC) ampilfier; mixer; multiplier; radar

Abstract
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter- and submillimeter-wave monolithic integrated circuits (MMICs and S-MMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4" GaAs substrates. This paper presents a 600 GHz amplifier S-MMIC and a chip set of MMICs developed for a 300 GHz radar.

: http://publica.fraunhofer.de/dokumente/N-281934.html