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HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

: Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen

Postprint urn:nbn:de:0011-n-2800274 (344 KByte PDF)
MD5 Fingerprint: 11d9dc6b8259b6f5509920be24815d0e
Erstellt am: 5.3.2014

Okumura, H.:
Silicon Carbide and Related Materials 2013. Vol.1 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1 (Print)
ISBN: 978-3-03795-705-9 (CD-ROM)
ISBN: 978-3-03835-010-1 (Print + CD-ROM)
ISBN: 978-3-03826-391-3 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC epitaxy; CVD; chloride assisted growth; carrier lifetime

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.