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Comparison of carrier lifetime measurements and mapping in 4H SiC using time resolved photoluminescence and μ-PCD

: Kallinger, Birgit; Rommel, Mathias; Lilja, Louise; Hassan, Jawad ul; Booker, Ian; Janzen, Erik; Bergman, Peder

Postprint urn:nbn:de:0011-n-2800266 (510 KByte PDF)
MD5 Fingerprint: d8d4ccd22dcdfcdcf678b8c17e7f71bb
Erstellt am: 5.3.2014

Okumura, H.:
Silicon Carbide and Related Materials 2013. Vol.1 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1 (Print)
ISBN: 978-3-03795-705-9 (CD-ROM)
ISBN: 978-3-03835-010-1 (Print + CD-ROM)
ISBN: 978-3-03826-391-3 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
silicon carbide; carrier lifetime; photoluminescence; μ-PCD

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.