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Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation

Presentation held at TMS Annual Meeting 2014 at San Diego, California, February 16-20, 2014; invited talk
SiC in Power Electronics: Overcoming the obstacle of bipolar degradation
: Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Friedrich, Jochen; Rommel, Mathias

Präsentation urn:nbn:de:0011-n-2800253 (1.2 MByte PDF)
MD5 Fingerprint: fc2f7a247dd6c1192c2768cb2a1ad3bc
Erstellt am: 6.3.2014

2014, 22 Folien
The Minerals, Metals and Materials Society (TMS Annual Meeting and Exhibition) <143, 2014, San Diego/Calif.>
Bayerische Forschungsstiftung BFS
AZ-720-06; KoSiC
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Vortrag, Elektronische Publikation
Fraunhofer IISB ()
power electronics; silicon carbide; defects; stability

Silicon Carbide (4H-SiC) is an ideal semiconductor for energy efficient power conversion modules. In recent years, unipolar SiC devices have been conquering the power electronics market. Contrarily, the commercialization of bipolar SiC devices has been hindered by the so-called bipolar degradation, which is closely related to the existence of certain structural defects within the active device volume. It will be shown how these critical defects can be avoided by optimizing the epitaxial growth of the active device volume. Furthermore, it will be proven that the absence of critical defects in the device prevents bipolar degradation. As the root cause of bipolar degradation is solved now, we also present remaining challenges for the commercialization of bipolar devices such as the cost reduction by enhancing the epitaxial growth rate and the improvement of device characteristics by increasing the minority carrier lifetime.