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Development and characterisation of 3D integration technologies for MEMS based on copper filled TSVs and copper-to-copper metal thermo compression bonding

: Baum, M.; Hofmann, L.; Wiemer, M.; Schulz, S.E.; Gessner, T.


Institute of Electrical and Electronics Engineers -IEEE-:
International Semiconductor Conference Dresden-Grenoble, ISCDG 2013 : 26-27 September 2013, Dresden
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-1250-6 (Print)
ISBN: 978-1-4799-1251-3
International Semiconductor Conference Dresden-Grenoble (ISCDG) <2013, Dresden>
Fraunhofer ENAS ()

3D integration technologies show increasing importance for high volume applications while realizing the smallest system dimensions at least. Therefore vertical interconnect and wafer bonding technologies were optimized and adapted to reach a high yield using quite narrow contact areas and bond frames. These technologies must enable mechanical stable bonding with high degree of strength, hermeticity, and an electrical connection from all layers of the stack to the next level.