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A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation

Eine rechenzeiteffiziente Methode für die dreidimensionale Simulation von Ionenimplantation
: Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.

IEICE Transactions on Electronics EC83 (2000), Nr.8, S.1259-1266
ISSN: 0916-8524
Fraunhofer IIS B ( IISB) ()
ion implantation; three-dimensional; Monte Carlo; analytical; Ionenimplantation; dreidimensional; analytisch; simulation

The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and
the Monte-Carlo simulation method.