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InGaAs-based large area photoconductive emitters for 1.55 mum excitation

: Xu, M.; Mittendorff, M.; Dietz, R.J.B.; Göbel, T.; Schneider, H.; Helm, M.; Winnerl, S.


IEEE Microwave Theory and Techniques Society; Fraunhofer-Institut für Physikalische Messtechnik -IPM-, Freiburg/Brsg.:
38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013 : Mainz, Germany, 1 - 6 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-4717-4 (online)
ISBN: 978-1-4673-4715-0 (print)
2 S.
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <38, 2013, Mainz>
Fraunhofer HHI ()

We present a scalable large-area terahertz (THz) emitter designed for excitation with 1.55 mum pump radiation. It is based on an InGaAs heterostructure combined with a microstructured electrode pattern. Electric fields of more than 2.5 V/cm in the THz focus are reached, the spectrum of the pulses extends up to 3 THz.