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Highly efficient Terahertz photoconductive switch at 1060nm excitation wavelength

: Gerth, C.; Dietz, R.J.B.; Göbel, T.; Schell, M.; Brahm, A.; Notni, G.; Tünnermann, A.


IEEE Microwave Theory and Techniques Society; Fraunhofer-Institut für Physikalische Messtechnik -IPM-, Freiburg/Brsg.:
38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013 : Mainz, Germany, 1 - 6 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-4717-4 (online)
ISBN: 978-1-4673-4715-0 (print)
2 S.
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <38, 2013, Mainz>
Fraunhofer HHI ()

Broadband and sensitive Terahertz (THz) emitter and detector material is required to build cost-effective and mobile THz time-domain spectrometer systems (TDS). We present an efficient THz switch optimized for femtosecond lasers operating at the central wavelength of about 1060 nm. Performance is improved by a factor of 20 due to the implementation of mesa structuring and utilization of low temperature grown (LT) Bedoped InGaAs/InAlAs antenna material.