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High speed 1.55 µm InAs/InGaAlAs/InP quantum dot lasers

: Gready, D.; Eisenstein, G.; Ivanov, V.; Gilfert, C.; Schnabel, F.; Rippien, A.; Reithmaier, J.P.; Bornholdt, C.


IEEE Photonics Technology Letters 26 (2014), Nr.1, S.11-13
ISSN: 1041-1135
Fraunhofer HHI ()

We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 mum. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm -1 per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.