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Simulation of the boron build-up formation during melting laser thermal annealing

Simulation der Anhäufung von Bor während der schmelzenden Laserausheilung
: Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.


Physica status solidi. C 11 (2014), Nr.1, S.89-92
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
European Materials Research Society (Spring Meeting) <2013, Strasbourg>
European Commission EC
FP7-ICT; 258547; ATEMOX
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IISB ()
melting laser thermal annealing; boron; build-up; diffusion

In this work, we present a model describing the boron redistribution during laser thermal annealing in the melting regime based on the adsorption of boron atoms at the solid-liquid interface. To validate the model, we performed SIMS measurements on silicon samples implanted with boron with an energy of 3 keV and doses of 3×1013 cm-2 and 4×1014 cm-2 annealed with a XeCl excimer laser with a wavelength of 308 nm, a pulse duration of 160 ns, and up to 10 consecutive pulses. After calibration, our model is able to reproduce the measured profiles for the different process conditions.