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Reliability investigations up to 350°C of gate oxid capacitors realized in a Silicon-on-Insulator CMOS-technology

: Grella, Katharina

Journal of microelectronics and electronic packaging 10 (2013), Nr.4, S.150-154
ISSN: 1551-4897
Fraunhofer IMS ()
Silicon-on-Insulator (SOI); oxide reliability; time-dependent dielectric breakdown (TDDB); Zuverlässigkeit; zeitabhängiger dielektrischer Durchbruch (TDDB)

It is difficult to use standard bulk-CMOS-technology at temperatures higher than 175°C due to high pn-leakage currents. Silicon-on-insulator-technologies (SOI), on the other hand, are usable up to 250°C and even higher, because leakage currents can be reduced by two to three orders of magnitude. Nevertheless, performance and reliability of SOI devices are strongly affected at these high temperatures. One of the main critical factors is the gate oxide quality and its reliability. In this paper, we present a study of gate oxide capacitor time-dependent dielectric breakdown (TDDB) measurements at temperatures up to 350°C. The experiments were carried out on gate oxide capacitor structures realized in the Fraunhofer 1.0 µm SOI-CMOS process. The gate oxide thickness is 40 nm. Using the data of the TDDB measurements, the behavior of field and temperature acceleration parameters at temperatures up to 350°C was evaluated. For a more detailed investigation, the evolution of the current in time was also studied. An analysis of the oxide breakdown conditions, in particular the field and temperature dependence of the charge to breakdown and the current just before breakdown, completes the study. The presented data provide important information about accelerated oxide reliability testing beyond 250°C, and make it possible to quickly evaluate the reliability of high temperature CMOS technologies at operation temperature.