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Ion sputtering at grazing incidence for SIMS-analysis

Ionenzerstäubung unter streifenden Einfallswinkeln für SIMS-Analyse
: Ullrich, M.; Burenkov, A.; Ryssel, H.

Helsinki University of Technology:
COSIRES 2004, 7th International Conference on Computer Simulation of Radiation Effects in Solids. Book of Abstracts
Helsinki: Helsinki University Printing House, 2004
International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES) <7, 2004, Helsinki>
Fraunhofer IISB ()
SIMS; Monte-Carlo simulation; ion sputtering

The angular distributions of sputtered atoms at large angle oblique and grazing incidence of the primary ion beam in SIMS-analysis have been simulated. They exhibit distinct arc-like areas of an enhanced sputtering yield in the spherical angular distributions, especially at grazing incidence angles of about 80º from the normal. These arc-like maxima are formed by particles knocked-out from the target as a result of single collisions between primary ions and target atoms. A possibility to use sputtered particles taken only from angles around those arc-like maxima in the angular distribution of sputtered particles for SIMS-analysis and the depth resolution of the SIMS-analysis for different sputtering conditions was investigated by means of Monte-Carlo simulations.