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Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

 
: Tessmann, A.; Schlechtweg, M.; Bruch, D.; Lewark, U.J.; Leuther, A.; Massler, H.; Wagner, S.; Seelmann-Eggebert, M.; Hurm, V.; Aidam, R.; Kallfass, I.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-:
Asia-Pacific Microwave Conference, APMC 2013. Proceedings : 5-8 November 2013, Seoul, Korea
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-1472-2
ISBN: 978-1-4799-1474-6
S.203-205
Asia-Pacific Microwave Conference (APMC) <2013, Seoul>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
amplifier; frequency mulitplier; metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); terahertz monolithic integrated circuit (TMIC)

Abstract
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4" GaAs substrates. The potential of this technology is demonstrated in this paper by two TMICs operating at 600 GHz: a high-gain amplifier and an active frequency multiplier-by-six.

: http://publica.fraunhofer.de/dokumente/N-273977.html