Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm

: Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.

Volltext urn:nbn:de:0011-n-2721705 (783 KByte PDF)
MD5 Fingerprint: f3a140dc01492c7dd41793c773822e0c
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 17.12.2013

IEEE photonics journal 5 (2013), Nr.6, Art. 8400709, 9 S.
ISSN: 1943-0655
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IAF ()
Distributed Bragg reflector (DBR); GaN; AlGaN; resonant-cavity light-emitting diode (RCLED); UV; fiber coupling

We report on the realization and first demonstration of CW near-milliwatt-power emission at (lambda) = 390 nm from resonant-cavity light-emitting diode (RCLED) on GaN templates. The vertical cavity consists of a bottom AlGaN/GaN distributed Bragg reflector and a top dielectric SiO(2) = ZrO(2) mirror enclosing a GaInN/GaN multiple-quantum-well active layer. RCLEDs with total optical output of about 600 µW at an injection current of 20 mA were achieved before packaging, taking account of current growth and processing considerations. Dislocations generated during the growth of the RCLED structure seem to be affecting the mean light output. This can be further improved by the use of high-quality low-dislocation-density GaN templates or freestanding GaN substrates.