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Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

: Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.


Applied Physics Letters 103 (2013), Nr.23, Art. 233506, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer IAF ()

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells
(and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.