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Investigations on partially filled HAR TSVs for MEMS applications

: Hofmann, L.; Schubert, I.; Gottfried, K.; Schulz, S.E.; Gessner, T.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE International Interconnect Technology Conference, IITC 2013. Proceedings : Kyoto, Japan, 13-15 June 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0438-9
ISBN: 978-1-4799-0440-2
ISBN: 978-1-4799-0439-6
3 S.
International Interconnect Technology Conference (IITC) <16, 2013, Kyoto>
Fraunhofer ENAS ()

For considerations of stress reduction HAR-TSVs were only partially filled with copper. A comparison was made to ring shaped TSVs (i.e. copper ring with silicon core). Two approaches regarding the way of TSV implementation (before and after wafer bonding/ thinning, resp.) are discussed, concerning process ability and yield aspects. Electrical measurement yield 11 MΩ for a single TSV and 76 MΩ for a 4-point TSV-chain (incl. RDL).