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Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

Dynamik von Dotieratomen und Defektwachstum in implantiertem Silicium unter Laserbestrahlung: Ein gekoppelter Ansatz aus Kontinuum- und Monte-Carlo Simulationen
: Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.


Institute of Electrical and Electronics Engineers -IEEE-; Univ. Glasgow:
18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 : 3rd - 5th September 2013, Glasgow, Scotland
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-5733-3 (Print)
ISBN: 978-1-4673-5736-4
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <18, 2013, Glasgow>
European Commission EC
FP7-ICT; 258547; ATEMOX
Fraunhofer IISB ()
laser annealing; silicon; dopant diffusion; defect evolution

Defect evolution and dopant dynamics in boron implanted silicon under excimer laser irradiation is investigated by means of continuous model and kinetic Monte Carlo (KMC) simulations. Both approaches rule the post-implant kinetics of the defects-dopant system in the extremely far from-the equilibrium conditions caused by the laser irradiation. The thermal problem has been solved within the phase-field methodology. Our model, based on the interaction between defects and the active/inactive impurities, elucidates the dopant activation as well as the observed defect aggregation. Concurrently to the solid-phase problem for the dopant activation, Boron evolution mechanism in silicon melting phase induced by the laser heating have been investigated in details. The analysis suggests an anomalous impurity redistribution in the molten regions induced by the melting laser irradiation related to the mixed (metal+covalent) bonding character of the liquid state. This microscopic mechanism explains the anomalous B segregation whereas accurate comparisons between experimental chemical profiles and simulation results validate the two state diffusion model.