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Aberration corrected TEM and Super-X STEM-EDXS characterization of high electron mobility transistor structures

 
: Graff, A

Rachel, R.:
Microscopy Conference, MC 2013. Conference proceedings : August 25–30, 2013, Regensburg, Germany
Regensburg: Universität Regensburg, 2013
URN: urn:nbn:de:bvb:355-epub-287343
S.453-454
Microscopy Conference (MC) <2013, Regensburg>
Englisch
Konferenzbeitrag
Fraunhofer IWM ()
Fraunhofer IAF ()
GaN-HEMT; aberration corrected TEM; STEM-EDXS

: http://publica.fraunhofer.de/dokumente/N-267341.html