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Comparison of carrier lifetime measurements and mapping using time resolved photoluminescence and µ-PCD

Poster presented at ICSCRM 2013, International Conference on Silicon Carbide and Related Materials, September 29 - October 4, 2013, Miyazaki, Japan
: Kallinger, Birgit

Poster urn:nbn:de:0011-n-2670124 (847 KByte PDF)
MD5 Fingerprint: 89f36f2f3b032ec4ffc8f00d6e74098b
Erstellt am: 26.11.2013

2013, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Poster, Elektronische Publikation
Fraunhofer IISB ()
silicon carbide; carrier lifetimes; photoluminescence; µ-PCD

Carrier lifetime measurements and wafer mappings have been done on several different 4H-SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave-detected photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.