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Laser assisted honeycomb-texturing on multicrystalline silicon for industrial applications

: Volk, A.-K.; Gutscher, S.; Brand, A.; Wolke, W.; Zimmer, M.; Reinecke, H.

Volltext urn:nbn:de:0011-n-2669421 (407 KByte PDF)
MD5 Fingerprint: 7274ea23265bc0b31cbc59cc56cccd95
Erstellt am: 30.11.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Honeycomb-Texture; Side Texture; Silicon; Etching; Ablation

In this study we investigated a manufacturing process for Honeycomb-texturing. An optimized masking dielectric layer, the opening of the mask via laser and an industrially applicable under-etching process lead to a homogeneous hexagonal structure with etch holes of 15 µm depth and a width of 31.5 µm. The reflection is dependent on the honeycomb structure or the surface roughness. It has been shown that by a short etching time the honeycomb texture is not completed, the surface is covered with too small honeycomb cavities; the unetched surface contributes with a reflection of 23 % to an increased total reflection at the surface. An optimum by etching time of 78 s (minimum reflection) was achieved, with a honeycomb width Wd = 31.5 µm and a depth honeycomb Wh = 15 µm, which lead to the best reflection of 17.5 % and even the highest lifetime of 604 ìs after passivation.