Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Study of the electrical insulation of dielectric passivation layers and stacks for back-contact back-junction silicon solar cells

 
: Keding, R.

:
Volltext urn:nbn:de:0011-n-2669333 (252 KByte PDF)
MD5 Fingerprint: 16336cc67b8736ff364a14746a0e2ddf
Erstellt am: 7.12.2013


Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
S.1321-1326
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Dotierung und Diffusion; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Solarzellen - Entwicklung und Charakterisierung; devices; properties; passivation; Farbstoff; Organische und Neuartige Solarzellen; Farbstoffsolarzellen; Degradation; Solar Cell; Spectroscopy; Stability; TiO2

Abstract
Within this work an intensive study concerning the electrical insulation of dielectric passivation layers is carried out. Therefore, metal-insulator-semiconductor (MIS) structures are manufactured. By using a 4-point measurement setup with ultra-sensitive piko-ampere meters, shunt resistances of the insulation layers and stacks within these MIS-structures are determined. Most promising is the combination of atomic layer deposited (ALD) aluminum oxide (Al2O3) with a thickness of 20 nm and plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) with a thickness of 1500 nm. These layers allow for median shunt resistances higher than 30 Mcm2 and a complete electrical insulation of wafers with an edge length of 156 mm. It is shown that the layer thickness of both, Al2O3 and SiOx, have a significant impact on the insulation properties of the whole stack. Defects in insulation layers which are short-circuited by the metallization are made visible by infra red (IR) measurements.

: http://publica.fraunhofer.de/dokumente/N-266933.html