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Process optimization and solar cell results of ConCVD epitaxial layers

: Keller, M.; Reber, S.; Schillinger, N.; Arnold, M.; Krogull, D.; Heermann, S.

Volltext urn:nbn:de:0011-n-2669156 (407 KByte PDF)
MD5 Fingerprint: aa7ba47e88c243334b6c0149fdaca58c
Erstellt am: 7.12.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; kerfless; Si-Deposition; Thin-Film; Epitaxy; Chemical Vapor Deposition

Silicon CVD is required to realise the upcoming “kerfless” c-Si thin-film solar cell concepts, like EpiCell, Lift-off and recrystallized wafer equivalent solar cells. To realise these solar cell concepts, a high throughput reactor with the possibility of continuous deposition is needed. For this reason, the ConCVD is the first epitaxy tool with a continuous wafer transport through the entire system. The requirements for such a machine are very sophisticated. Despite the open construction, the flammable and toxic reactor atmosphere must be separated from the surrounding atmosphere and the other way around, impurities must not get inside the reactor. This work reports on process improvement and solar cell results on layers deposited in the ConCVD at Fraunhofer ISE. The ConCVD (Continuous CVD) is a link between lab type reactors and a production reactor (ProConCVD), also developed at the Fraunhofer ISE. Setup improvements could enhance deposition conditions by providing a particle free environment. Furthermore, processes optimisations in this new setup lead to a solar cell result of 13.8%.