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IntegRex - process development of a module interconnection concept for thin crystalline silicon films

: Pavlovic, R.

Volltext urn:nbn:de:0011-n-2669101 (408 KByte PDF)
MD5 Fingerprint: 74b5fa06604f54e42e0f4e9474612cf1
Erstellt am: 30.11.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; Silicon; Thin Film; Monolithic Interconnection

In this work the realization of a concept for integrated interconnected crystalline silicon thin film solar cells in a laboratory process is described. This module concept, referred to as IntegRex (Integrated interconnection of recrystallized silicon layers), is developed for recrystallized or lift-off crystalline silicon layers. Following the classical thin film approach the crystalline silicon thin film is divided into individual cell strips and interconnected monolithically on a substrate. To investigate the individual processing steps silicon on insulator (SOI) wafers with a buried oxide layer and epitaxially deposited back surface field (BSF) and base are used instead of recrystallized or lift-off crystalline silicon films. A first batch of IntegRex mini-modules on SOI wafers was processed. Despite a not yet optimized metallization scheme, a VOC of over 3 V could be reached for a mini-module consisting of five cells. Problems that occurred in the metallization process are presented here and a possible solution is discussed.