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HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

Poster presented at ICSCRM 2013, International Conference on Silicon Carbide and Related Materials, September 29 - October 4, 2013, Miyazaki, Japan
 
: Kallinger, Birgit

:
Poster urn:nbn:de:0011-n-2665974 (411 KByte PDF)
MD5 Fingerprint: 942b7c7bdda911d0428abdfbc7fe4467
Erstellt am: 16.11.2013


2013, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; epitaxy; CVD; chloride assisted growth; carrier lifetime

: http://publica.fraunhofer.de/dokumente/N-266597.html