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Materials and structural design of a mid-infrared light-emitting device

: Weik, F.; Tomm, J.W.; Glatthaar, R.; Vetter, U.; Szewczyk, D.; Nurnus, J.; Lambrecht, A.; Grau, M.; Meyer, R.; Amann, M.C.; Spellenberg, B.; Bassler, M.


Stockman, S.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Light-emitting diodes: Research, manufacturing, and applications VIII : 27 - 28 January 2004, San Jose, California, USA
Bellingham/Wash.: SPIE, 2004 (SPIE Proceedings Series 5366)
ISBN: 0-8194-5274-2
Conference "Light-Emitting Diodes - Research, Manufacturing, and Applications" <2004, San Jose/Calif.>
Fraunhofer IPM ()

An optically pumped emitter for the mid-infrared region around 4 ým based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 µm and the radiation is converted by the narrow ap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.