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Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications

 
: Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.

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IEEE Electron Devices Society; IEEE Solid-State Circuits Society; IEEE Microwave Theory and Techniques Society:
35th IEEE Compound Semiconductor Integrated Cicuit Symposium, CSIC 2013 : Oct 13th - Oct 16th, 2013, Monterey, California, USA
New York, NY: IEEE, 2013
ISBN: 978-1-4799-0581-2
ISBN: 978-1-4799-0583-6
4 S.
Compound Semiconductor Integrated Cicuit Symposium (CSIC) <35, 2013, Monterey/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
power conversion; AlGaN/GaN-on-Si; low dynamic on-state-resistance; low gate charge; low switching losses

Abstract
This work reports the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly-efficient, fast-switching power converters. High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-art silicon power devices. Compared to their silicon counterparts the GaN-device achieves by a factor of 3 lower static area specific on-state resistance R(ON)*A, and by a factor of 3 lower static on-state resistance times gate charge product R(ON)*Q. In switching tests the device achieves a low dynamic dispersion and low switching losses. Furthermore in this work a sophisticated measurement setup for characterization of dynamic parameters is developed and demonstrated. Characterization and test conditions are adapted for the use in fast-switching power converter applications.

: http://publica.fraunhofer.de/dokumente/N-265036.html