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Deep energy levels of platinum-hydrogen complexes in silicon

Tiefe Störstellen von Platin-Wasserstoff-Komplexen in Silicium
 
: Badr, Elie; Pichler, Peter; Schmidt, Gerhard

:

Murphy, J.D.:
Gettering and Defect Engineering in Semiconductor Technology XV, GADEST 2013 : Selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22 - 27, 2013, Oxford, UK
Durnten-Zurich: TTP, 2014 (Solid state phenomena 205-206)
ISBN: 978-3-03785-824-0
S.260-264
International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <15, 2013, Oxford>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
DLTS; platinum; hydrogen; silicon

Abstract
Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.

: http://publica.fraunhofer.de/dokumente/N-264933.html