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Evaluation of UV-SCIL resists for structure transfer using plasma etching

Presentation held at NNT 2013, 12th International Conference on Nanoimprint & Nanoprint Technology, Barcelona, Catalonia, October 21-23, 2013
: Rumler, Maximilian; Rusch, O.; Fader, Robert; Haas, Anke; Rommel, Mathias; Bauer, Anton J.; Frey, Lothar; Brehm, Markus; Kraft, Andreas

Poster urn:nbn:de:0011-n-2649325 (2.3 MByte PDF)
MD5 Fingerprint: f5349fc2378ef2a6ef90e61210b7fe4d
Erstellt am: 31.10.2013

2013, 1 Folie
International Conference on Nanoimprint & Nanoprint Technology (NNT) <12, 2013, Barcelona>
Poster, Elektronische Publikation
Fraunhofer IISB ()
nanoimprint; RIE; UV-SCIL

UV enhanced substrate conformal imprint lithography is an innovative full wafer scale soft lithography technique[1]. Possible fields of applications for UV-SCIL can require the transfer of the imprinted structure into various substrate materials. Therefore, the masking capabilities of UV-SCIL resists are of great interest for potential users. In this work, for two experimental fully organic resists etching rates and selectivities in plasma etching processes for silicon, silicon dioxide and aluminum are evaluated. Our results show that both resists are suitable for the transfer of nanostructures using plasma etching.