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Signal generation and amplification up to 600 GHz using metamorphic HEMT technology

: Lewark, U.J.; Tessmann, A.; Leuther, A.; Zwick, T.; Ambacher, O.; Kallfass, I.

European Microwave Association:
8th European Microwave Integrated Circuits Conference, EuMIC 2013. Proceedings : 6-8 Oct 2013, Nuremberg, Germany; European Microwave Week
London: Horizon House, 2013
ISBN: 978-2-87487-032-3
European Microwave Integrated Circuits Conference (EuMIC) <8, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Fraunhofer IAF ()
amplifier; frequency multiplier; submillimeter-wave monolithic integrated circuit (S-MMIC); terahertz monolithic integrated circuit (TMIC)

In this paper, we present an overview of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for applications around 600 GHz, recently realized using our 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW) with a reduced ground-to-ground spacing. A frequency multiplier-by-six is presented for signal generation and a terahertz monolithic integrated circuit (TMIC) is shown, offering a small-signal gain of more than 18 dB between 557 and 616 GHz.