Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs

 
: Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.

:

Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
S.533-536
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()

Abstract
4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

: http://publica.fraunhofer.de/dokumente/N-264735.html