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Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components

: Lang, K.-D.; Ndip, I.; Guttowksi, S.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 : IEEE Radio & Wireless Week, RWW 2013; 21-23 January 2013, Austin, Texas
New York, NY: IEEE, 2013
ISBN: 978-1-4673-1552-4 (Print)
ISBN: 978-1-4673-1551-7 (Online)
ISBN: 978-1-4673-1553-1
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) <13, 2013, Austin/Tex.>
Radio and Wireless Week (RWW) <7, 2013, Austin/Tex.>
Fraunhofer IZM ()

Through silicon vias (TSV) are modeled as metal-insulator-semiconductor structures in this paper. The slow-wave, dielectric quasi-TEM and skin-effect modes are discussed. Analytical expressions for calculating the electrical parameters of TSVs, which accurately capture the transition between the modes, are proposed. The TSVs are fabricated and measured. Good correlation is obtained between TSV parameters extracted from measurement and simulation.