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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

: Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.


Rafhay, Q.:
Selected extended papers from ULIS 2012 Conference : 13th edition of the Ultimate Integration on Silicon Conference, held in Grenoble, 05.-07.03.2012
Amsterdam: Elsevier, 2013 (Solid-state electronics 88.2013)
ISSN: 0038-1101
International Conference on Ultimate Integration on Silicon (ULIS) <13, 2012, Grenoble>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IPMS ()

Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[Zrx Ti1- x ]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.