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Hier finden Sie wissenschaftliche Publikationen aus den FraunhoferInstituten. Application of the transverse resonance method for efficient extraction of the dispersion relation of arbitrary layers in silicon interposers
 Institute of Electrical and Electronics Engineers IEEE: 17th IEEE Workshop on Signal and Power Integrity, SPI 2013 : 1215 May 2013, Paris New York, NY: IEEE, 2013 ISBN: 9781467356787 (Print) ISBN: 9781467356794 4 S. 
 Workshop on Signal and Power Integrity (SPI) <17, 2013, Paris> 

 Englisch 
 Konferenzbeitrag 
 Fraunhofer IZM () 
Abstract
In this article, the dispersion relation for horizontal wave propagation in silicon interposers consisting of arbitrary numbers of silicon and silicon dioxide layers between metal layers is investigated. Results are obtained by the transverse resonance method (TRM). The method is verified by comparison to results of finite element based fullwave simulations. The results of the TRM show good correspondence with those obtained by fullwave simulations and can be obtained within significantly shorter calculation times. Results for a typical layout of a silicon interposer and examples for thin silicon dioxide layers and a large number of layers are also presented. Further, an approximate solution for the fundamental mode of typical structures is given and examples show the applicability and limitations of the approximate solution.