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1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C

: Fendler, D.; Möhrle, M.; Spiegelberg, M.; Rehbein, W.; Passenberg, W.; Grote, N.


Institute of Electrical and Electronics Engineers -IEEE-:
25th International Conference on Indium Phosphide and Related Materials, IPRM 2013. Proceedings : Held 19-23 May 2013, Kobe, Japan
Piscataway/NJ: IEEE, 2013
ISBN: 978-1-4673-6130-9 (Print)
ISBN: 978-1-4673-6131-6 (Online)
ISBN: 978-1-4673-6132-3
International Conference on Indium Phosphide and Related Materials (IPRM) <25, 2013, Kobe>
Fraunhofer HHI ()

1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the s pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.