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Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors

: Seifert, S.; Ravash, R.; Franke, D.; Wenning, F.; Zengler, D.; Kießling, F.


Institute of Electrical and Electronics Engineers -IEEE-:
25th International Conference on Indium Phosphide and Related Materials, IPRM 2013. Proceedings : Held 19-23 May 2013, Kobe, Japan
Piscataway/NJ: IEEE, 2013
ISBN: 978-1-4673-6130-9 (Print)
ISBN: 978-1-4673-6131-6 (Online)
ISBN: 978-1-4673-6132-3
2 S.
International Conference on Indium Phosphide and Related Materials (IPRM) <25, 2013, Kobe>
Fraunhofer HHI ()

Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.