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HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention

: Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.


Institute of Electrical and Electronics Engineers -IEEE-:
4th IEEE International Memory Workshop, IMW 2012 : Milano, Italy, 20-23 May 2012
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1080-2
ISBN: 978-1-4673-1079-6
Art. 6213620, 4 S.
International Memory Workshop (IMW) <4, 2012, Milano>
Fraunhofer CNT ()

We report the fabrication of highly scaled sub-0.3 m ferroelectric field-effect transistors on the basis of ferroelectric HfO2. The electrical properties of 9 nm thick Si-doped HfO2 films depending on the silicon content and the annealing temperature were investigated. The most suitable fabrication conditions for the emergence of ferroelectricity were identified. The ferroelectric properties were verified up to temperatures of 170 oC. N-channel MFIS-FETs (Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistors) with poly-Si/TiN/Si:HfO2/SiO2/Si gate stack and channel lengths down to 260 nm were successfully fabricated. The switching characteristics, endurance and retention properties were analysed. Switching times of 10 ns were demonstrated. A memory window of 1.2 V was obtained with program/erase voltages of -6.5 V and +4 V and pulses as short as 50 ns. Endurance performance of up to 104 cycles was verified. Retention characteristics were measured at 25 oC and 150 oC. 10 years data retention was indicated for both temperatures by the extrapolation of the experimental data.