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Dopant uniformity and concentration in boron doped single crystal diamond films

 
: Demlow, S.N.; Berkun, I.; Becker, M.; Hogan, T.; Grotjohn, T.A.

:

Bergonzo, P.:
Diamond electronics and biotechnology - fundamentals to applications V : Symposium held November 28 - December 2, 2011, Boston, Massachussetts
Cambridge: Cambridge University Press, 2012 (Materials Research Society Symposium Proceedings 1395)
ISSN: 0272-9172
ISBN: 978-1-60511-372-2
S.13-19
Symposium N "Diamond Electronics and Biotechnology - Fundamentals to Applications V" <2012, Boston/Mass.>
Materials Research Society (Fall Meeting) <2012, Boston/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer CLT ()

Abstract
High quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

: http://publica.fraunhofer.de/dokumente/N-264081.html