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2012
Journal Article
Titel
Influence of channel geometry over source to drain current
Abstract
This paper investigates influence of channel geometry over the drain current in organic field effect transistors. The semiconductor material of these transistors is TIPS pentacene. For this experiment the devices were fabricated in the same lot and in the same technological process, and in this condition the only variable is the length of the channel. All the measurements were made in the same condition.