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Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

: Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.


Symposium on VLSI Technology, VLSIT 2012 : Honolulu, Hawaii, USA, 12 - 14 June 2012
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-0846-5 (print)
ISBN: 978-4-86348-264-7 (online)
ISBN: 978-1-4673-0845-8
Symposium on VLSI Technology (VLSIT) <2012, Honolulu/Hawaii>
Fraunhofer CNT ()

We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO 2 in a 28 nm HKMG stack (TiN/Si:HfO 2/SiO 2/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics matching demands of current nonvolatile memories utilizing wear leveling. Low retention loss was observed and extrapolated 10-year data storage can be expected.