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Gamma and neutron irradiation of optoelectronic devices

 

Centre National d'Etudes Spatiales, Paris:
RADECS 95. Third European Conference on Radiation and its Effects on Components and Systems
Piscataway, NJ: IEEE, 1996 (IEEE Transactions on Nuclear Science 43,3)
ISBN: 0-7803-3093-5
S.560-563
European Conference on Radiation and its Effects on Components and Systems (RADECS) <3, 1995, Arcachon>
Englisch
Konferenzbeitrag
Fraunhofer INT ()
gamma irradiation; laser diodes; light emitting diodes; neutron irradiation; photodiodes; radiation sensitivity

Abstract
Active optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodiodes (PDs) were evaluated for degradation under gamma and 14 MeV neutron irradiation. Dose rates, total dose values, and neutron fluences were chosen in such a way that we get estimates of the behaviour especially in space environments and nuclear engineering. The devices are designed for wavelengths from visible (450 nm) to infrared (1300 nm). LEDs and LDs show a reduction of light output power and LDs also a shift of threshold current after irradiation. With the LEDs we also measured the light power distribution on the chip surface. Irradiations of PDs with 60Co gammas up to a total dose of 10 E6 Gy as well as irradiations with neutrons up to fluences of 3x10 E13 cm E-2 (1 MeV) lead to a strong increase of dark current.

: http://publica.fraunhofer.de/dokumente/N-263.html